The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 06, 2018
Filed:
Dec. 31, 2015
Boe Technology Group Co., Ltd., Beijing, CN;
Ordos Yuansheng Optoelectronics Co., Ltd., Ordos, Inner Monogolia, CN;
Lulu Ye, Beijing, CN;
Huafeng Liu, Beijing, CN;
Jingping Lv, Beijing, CN;
Lei Yang, Beijing, CN;
Meng Yang, Beijing, CN;
Kai Zhang, Beijing, CN;
Chao Wang, Beijing, CN;
Chaochao Sun, Beijing, CN;
Shengwei Zhao, Beijing, CN;
BOE TECHNOLOGY GROUP CO., LTD., Beijing, CN;
ORDOS YUANSHENG OPTOELECTRONICS CO., LTD., Ordos, Inner Mongolia, CN;
Abstract
Preparation method for a thin film transistor, preparation method for an array substrate, an array substrate, and a display apparatus are provided. The preparation method for a thin film transistor includes: forming, on a pattern of a semiconductor layer, a first photoresist pattern including a photoresist with two different thicknesses, and performing a heavily-doped ion implantation process on the pattern of the semiconductor layer by using the first photoresist pattern as a barrier mask; ashing the first photoresist pattern to remove the photoresist with a second thickness and to thin the photoresist with a first thickness, so as to form a second photoresist pattern; and performing a lightly-doped ion implantation process on the pattern of the semiconductor layer by using the second photoresist pattern as a barrier mask.