Manufacturing method for tft substrate and tft substrate manufactured by the manufacturing method thereof

Abstract

The invention provides an array substrate and a manufacturing method thereof. The array substrate comprises a substrate body, a common electrode, a light shield layer, an insulating layer, a polycrystalline silicon layer, a gate insulating layer, a gate electrode, a medium layer and a source-drain electrode. The array substrate is characterized in that the common electrode is formed on the substrate body, the light shield layer is positioned on the common electrode, the insulating layer is positioned on the light shield layer and the common electrode, and the gate electrode is connected with the common electrode through a through hole. The manufacturing method of the array substrate includes the steps: forming the patterned common electrode and the patterned light shield layer by one-time photomask and multiple etching after a transparent conducting layer and a first metal layer are formed on the substrate body, and saving one photomask; forming an electrode through hole communicated with the common electrode and the gate electrode after photomask and etching, and subsequently manufacturing the medium layer and the source-drain electrode. The whole process has seven photomasks, machining process steps of an array substrate tube are simplified, and the manufacturing cost of the array substrate is reduced.