The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 06, 2018

Filed:

Jul. 21, 2015
Applicant:

Schlumberger Technology Corporation, Sugar Land, TX (US);

Inventors:

Frederic Gicquel, Katy, TX (US);

Olivier G. Philip, Ewing, NJ (US);

Christian Stoller, Sugar Land, TX (US);

Zilu Zhou, Needham, MA (US);

Assignee:

SCHLUMBERGER TECHNOLOGY CORPORATON, Sugar Land, TX (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01V 5/00 (2006.01); G01V 5/10 (2006.01); G01T 1/24 (2006.01);
U.S. Cl.
CPC ...
G01V 5/107 (2013.01); G01T 1/241 (2013.01);
Abstract

Devices and methods for a rugged semiconductor radiation detector are provided. The semiconductor detector may include a hermetically sealed housing and a semiconductor disposed within the housing that has a first surface and a second surface opposite one another. A first metallization layer may at least partially cover the first surface of the semiconductor and a second metallization layer may at least partially cover the second surface of the semiconductor. The first metallization layer or the second metallization layer, or both, do not extend completely to an edge of the semiconductor, thereby providing a nonconductive buffer zone. This reduces electrical field stresses that occur when a voltage potential is applied between the first metallization layer and the second metallization layer and reduces a likelihood of electrical failure (e.g., due to arcing).


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