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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10118247 B1

PDFFull Text
Date of Patent:
Nov. 06, 2018

Filed:

May. 19, 2017

Method for bonding wafers

Applicant:

Murata Manufacturing Co., Ltd., Nagaokakyo-shi, Kyoto-fu, JP;

Inventors:

Masakazu Fukumitsu, Nagaokakyo, JP;

Shuhei Yamada, Nagaokakyo, JP;

Assignee:

MURATA MANUFACTURING CO., LTD., Nagaokakyo-Shi, Kyoto-Fu, JP;

Attorney:

Arent Fox LLP

Primary Examiner:

Long Pham

Int. Cl.
CPC ...
H01L 41/313 (2013.01); B23K 20/02 (2006.01); B06B 1/06 (2006.01); H01L 41/09 (2006.01); B23K 20/16 (2006.01); B23K 20/22 (2006.01); B81C 1/00 (2006.01); H01L 21/18 (2006.01); B23K 101/40 (2006.01); H03H 3/02 (2006.01); H03H 9/05 (2006.01); H03H 9/10 (2006.01);
U.S. Cl.
CPC ...
B23K 20/023 (2013.01); B06B 1/06 (2013.01); B06B 1/0603 (2013.01); B23K 20/16 (2013.01); B23K 20/22 (2013.01); B81C 1/00269 (2013.01); H01L 21/187 (2013.01); H01L 41/09 (2013.01); H01L 41/313 (2013.01); B06B 1/0648 (2013.01); B23K 2101/40 (2018.08); B81B 2201/0242 (2013.01); B81C 2203/033 (2013.01); B81C 2203/035 (2013.01); H03H 3/02 (2013.01); H03H 9/0595 (2013.01); H03H 9/1035 (2013.01); H03H 2003/026 (2013.01);
Abstract

Provided is a method for bonding wafers, which can bond the wafers to each other with high reliability while reducing the influence on the wafers. The method for bonding wafers includes the steps of: preparing a first wafer that has, on the surface thereof, a first metal layer with a first rigidity modulus, and a second wafer that has, on the surface thereof, a second metal layer with a second rigidity modulus higher than the first rigidity modulus; removing an oxide film at the surface of the second metal layer while an oxide film at the surface of the first metal layer is not removed; and bonding the surface of the first wafer to the surface of the second wafer.

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