The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 2018
Filed:
Nov. 25, 2016
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventor:
Yoshihiro Tsukahara, Tokyo, JP;
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03F 3/04 (2006.01); H03F 3/16 (2006.01); H03F 3/193 (2006.01); H03F 1/02 (2006.01);
U.S. Cl.
CPC ...
H03F 3/193 (2013.01); H03F 1/0211 (2013.01); H03F 2200/21 (2013.01); H03F 2200/451 (2013.01);
Abstract
A current reuse FET amplifier according to the present invention provides an effect of reducing a variation of bias current of the amplifier, with gate voltage or a resistor for self-biasing of an FET of the amplifier changing in accordance with a process variation of saturation current Idss of the FET.