The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 30, 2018

Filed:

Aug. 29, 2014
Applicants:

Toshiba Mitsubishi-electric Industrial Systems Corporation, Chuo-ku, JP;

Mitsubishi Electric Corporation, Chiyoda-ku, JP;

Inventors:

Keisuke Ohnishi, Chuo-ku, JP;

Masahiro Kinoshita, Chuo-ku, JP;

Kimiyuki Koyanagi, Chiyoda-ku, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H02M 5/458 (2006.01); H02M 7/04 (2006.01); H02M 1/08 (2006.01); H02M 1/00 (2006.01);
U.S. Cl.
CPC ...
H02M 5/458 (2013.01); H02M 1/08 (2013.01); H02M 7/04 (2013.01); H02M 2001/0054 (2013.01);
Abstract

A converter includes: a first transistor (Q) connected between a first output terminal (T) and an input terminal (T); a second transistor (Q) connected between the input terminal (T) and a second output terminal (T); first and second diodes (D, D) connected in anti-parallel to the first and second transistors (Q, Q), respectively; and a bidirectional switch that is connected between the input terminal (T) and a third output terminal (T) and that includes third and fourth transistors (Q, Q) and third and fourth diodes (D, D). The first and second diodes (D, D) and the third and fourth transistors (Q, Q) each are formed of a wide band gap semiconductor. The third and fourth diodes (D, D) and the first and second transistors (Q, Q) each are formed of a semiconductor other than the wide band gap semiconductor.


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