The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 2018
Filed:
Feb. 22, 2017
Intop Corp., Wilton, NH (US);
Geoff W. Taylor, Wilton, NH (US);
Jianhong Cai, Andover, MA (US);
Other;
Abstract
A semiconductor device includes an array of VCSEL devices with an annealed oxygen implant region (annealed at a temperature greater than 800° C.) that surrounds and extends laterally between the VCSEL devices. A common anode and a common cathode can be electrically coupled to the VCSEL devices, with the common anode overlying the annealed oxygen implant region. The annealed oxygen implant region can funnel current into active optical regions of the VCSEL devices and provide current isolation between the VCSEL devices while avoiding an isolation etch between VCSEL devices. In another embodiment, a semiconductor device includes an annealed oxygen implant region surrounding a VCSEL device. The VCSEL device(s) can be formed from a multi-junction layer structure where built-in hole charge Qfor an intermediate p-type layer relative to built-in electron charge Qfor a bottom n-type layer is configured for diode-like current-voltage characteristics of the VCSEL device(s).