The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 2018
Filed:
Feb. 28, 2017
Applicant:
Youtec Co., Ltd., Chiba, JP;
Inventors:
Takeshi Kijima, Chiba, JP;
Yuuji Honda, Chiba, JP;
Assignee:
Advanced Material Technologies, Inc., Chiba, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/40 (2006.01); C23C 16/06 (2006.01); H01L 41/316 (2013.01); C30B 29/68 (2006.01); C30B 29/02 (2006.01); C30B 29/16 (2006.01); H01L 41/08 (2006.01); H01L 41/319 (2013.01); C30B 23/02 (2006.01); C23C 14/18 (2006.01); C23C 14/30 (2006.01); C23C 14/34 (2006.01); C23C 16/48 (2006.01); C30B 5/00 (2006.01); C30B 23/08 (2006.01); C30B 25/10 (2006.01); C30B 25/18 (2006.01); C30B 29/06 (2006.01); C30B 29/32 (2006.01);
U.S. Cl.
CPC ...
H01L 41/316 (2013.01); C23C 14/185 (2013.01); C23C 14/30 (2013.01); C23C 14/34 (2013.01); C23C 16/405 (2013.01); C23C 16/487 (2013.01); C30B 5/00 (2013.01); C30B 23/02 (2013.01); C30B 23/08 (2013.01); C30B 25/10 (2013.01); C30B 25/18 (2013.01); C30B 29/02 (2013.01); C30B 29/06 (2013.01); C30B 29/16 (2013.01); C30B 29/32 (2013.01); C30B 29/68 (2013.01); H01L 41/0815 (2013.01); H01L 41/319 (2013.01); Y10T 428/266 (2015.01);
Abstract
A method for manufacturing a crystal film including: forming a Zr film on a substrate heated to 700° C. or more by a vapor deposition method using a vapor deposition material having a Zr single crystal; forming a ZrOfilm on said Zr film on a substrate heated to 700° C. or more, by a vapor deposition method using said vapor deposition material having a Zr single crystal, and oxygen; and forming a YOfilm on said ZrOfilm on a substrate heated to 700° C. or more, by a vapor deposition method using a vapor deposition material having Y, and oxygen.