The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 30, 2018

Filed:

Oct. 14, 2014
Applicant:

Osram Opto Semiconductors Gmbh, Regensburg, DE;

Inventors:

Mathias Kaempf, Burglengenfeld, DE;

Simon Jerebic, Tegernheim, DE;

Ingo Neudecker, Regensburg, DE;

Guenter Spath, Regensburg, DE;

Michael Huber, Bad Abbach, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/48 (2010.01); H01L 33/20 (2010.01); H01L 23/00 (2006.01); H01L 33/54 (2010.01); H01L 33/56 (2010.01); H01L 33/60 (2010.01); H01L 33/62 (2010.01);
U.S. Cl.
CPC ...
H01L 33/486 (2013.01); H01L 24/32 (2013.01); H01L 33/0095 (2013.01); H01L 33/20 (2013.01); H01L 33/54 (2013.01); H01L 33/56 (2013.01); H01L 33/60 (2013.01); H01L 33/62 (2013.01); H01L 2224/73265 (2013.01); H01L 2924/10156 (2013.01); H01L 2933/0033 (2013.01);
Abstract

The invention relates to an optoelectronic semiconductor chip () comprising a carrier () and a semiconductor body () having an active layer () provided for generating electromagnetic radiation. Said carrier () has a first main surface (A) facing the semiconductor body, a second main surface (B) facing away from the semiconductor body, and a sidewall (C) arranged between the first main surface and the second main surface. The carrier () has a structured region (C) for enlarging the total surface area of the sidewall, wherein the structured region has singulation traces. The invention also relates to an optoelectronic component () comprising such a semiconductor chip and a method for producing a plurality of such semiconductor chips are specified.


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