The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 30, 2018

Filed:

Jul. 14, 2017
Applicant:

Osram Opto Semiconductors Gmbh, Regensburg, DE;

Inventors:

Markus Maute, Alteglofsheim, DE;

Karl Engl, Pentling, DE;

Sebastian Taeger, Bad Abbach, DE;

Robert Walter, Parsberg, DE;

Johannes Stocker, München, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/49 (2006.01); H01L 33/46 (2010.01); H01L 33/32 (2010.01); H01L 33/06 (2010.01); H01L 33/42 (2010.01); H01L 33/38 (2010.01); H01L 33/60 (2010.01); H01L 33/20 (2010.01); H01L 33/40 (2010.01);
U.S. Cl.
CPC ...
H01L 33/46 (2013.01); H01L 33/06 (2013.01); H01L 33/32 (2013.01); H01L 33/382 (2013.01); H01L 33/42 (2013.01); H01L 33/60 (2013.01); H01L 33/20 (2013.01); H01L 33/405 (2013.01); H01L 2924/0002 (2013.01);
Abstract

An optoelectronic semiconductor chip is disclosed. In an embodiment the optoelectronic semiconductor chip includes a semiconductor body of semiconductor material, a p-contact layer and an n-contact layer. The semiconductor body includes an active layer intended for generating radiation. The semiconductor body includes a p-side and an n-side, between which the active layer is arranged. The p-contact layer is intended for electrical contacting the p-side. The n-contact layer is intended for electrical contacting the n-side. The n-contact layer contains a TCO layer and a mirror layer, the TCO-layer being arranged between the n-side of the semiconductor body and the mirror layer.


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