The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 2018
Filed:
Aug. 02, 2017
Xiamen Sanan Optoelectronics Technology Co., Ltd., Xiamen, CN;
Guanying Huang, Xiamen, CN;
Chun-Yi Wu, Xiamen, CN;
Chaoyu Wu, Xiamen, CN;
Duxiang Wang, Xiamen, CN;
XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD., Xiamen, CN;
Abstract
A light-emitting diode includes: an epitaxial-laminated layer having from bottom up: an n-type ohmic contact layer, a first n-type transition layer, an n-type etching-stop layer, a second n-type transition layer, an n-type confinement layer, an active layer, a p-type confinement layer, a p-type transition layer and a p-type window layer; a p electrode on the upper surface of the p-type window layer; a metal bonding layer over the bottom surface of the n-type ohmic contact layer, wherein, the portion corresponding to the p electrode position extends upwards and passes through the n-type ohmic contact layer and the first n-type transition layer, till the n-type etching-stop layer, thereby forming a current distribution adjustment structure such that the injected current would not flow towards the epitaxial-laminated layer right below the p electrode; and a conductive substrate over the bottom surface of the metal bonding layer.