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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10115858 B1

PDFFull Text
Date of Patent:
Oct. 30, 2018

Filed:

Jan. 15, 2018

Light emitting diode and fabrication method thereof

Applicant:

Xiamen San'an Optoelectronics Co., Ltd., Xiamen, CN;

Inventors:

Chih-Ching Cheng, Xiamen, CN;

Chan-Chan Ling, Xiamen, CN;

Chia-Hung Chang, Xiamen, CN;

Assignee:

XIAMEN SAN'AN OPTOELECTRONICS CO., LTD., Xiamen, CN;

Attorneys:

Syncoda LLC

Feng Ma

Junjie Feng

Primary Examiner:

David Vu

Int. Cl.
CPC ...
H01L 33/04 (2010.01); H01L 33/02 (2010.01); H01L 33/00 (2010.01); H01L 33/32 (2010.01); H01L 33/24 (2010.01);
U.S. Cl.
CPC ...
H01L 33/04 (2013.01); H01L 33/00 (2013.01); H01L 33/0075 (2013.01); H01L 33/02 (2013.01); H01L 33/025 (2013.01); H01L 33/24 (2013.01); H01L 33/32 (2013.01);
Abstract

A method of fabricating a light emitting diode includes providing a substrate, and forming successively an N-type layer, an active layer, an electronic blocking layer, and a P-type layer over the substrate. The P-type layer includes a Mg-doped GaN material layer having a Mg impurity concentration of about 2×10-2×10cm; and has a thickness of less than or equal to about 250 Å, and has a surface density of V-type defects of less than or equal to about 5×10cm. Through these optimized growth conditions for the P-type layer, the light absorption of the P-type layer can be reduced, the electric leakage due to the relatively large density of V-type defects on the surface can be reduced, and the anti-static capacity of the light emitting diode fabricated thereby can be improved.

Find Patent Forward Citations

Cheng, Chih-Ching. (2018). Light emitting diode and fabrication method thereof (U.S. Patent No. 10115858). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10115858

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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