The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 2018
Filed:
Sep. 04, 2015
Newsouth Innovations Pty Limited, Sydney, New South Wales, AU;
Shin Shin Natural Gas Co. Ltd., Taiwan, CN;
Epistar Corporation, Taiwan, CN;
Xiaojing Hao, Matraville, AU;
Martin Andrew Green, Bronte, AU;
Ziheng Liu, Maroubra, AU;
Wei Li, Kensington, AU;
Anita Wing Yi Ho-Baillie, Lane Cove, AU;
NewSouth Innovations Pty Limited, Sydney, New South Wales, AU;
Abstract
The present disclosure provides a method of manufacturing a semiconductor device. Furthermore the present disclosure provides a photovoltaic device and a light emitting diode manufactured in accordance with the method. The method comprises the steps of forming a germanium layer using deposition techniques compatible with high-volume, low-cost manufacturing, such as magnetron sputtering, and exposing the germanium layer to laser light to reduce the amount of defects in the germanium layer. After the method is performed the germanium layer can be used as a virtual germanium substrate for the growth of III-V materials.