The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 2018
Filed:
Apr. 02, 2015
Applicant:
Trustees of Tufts College, Medford, MA (US);
Inventors:
Changqiong Zhu, Melrose, MA (US);
Matthew Panzer, Somerville, MA (US);
Assignee:
Trustees of Tufts College, Medford, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01B 1/08 (2006.01); H01L 31/06 (2012.01); H01L 31/032 (2006.01); H01G 9/20 (2006.01); C01G 3/02 (2006.01); H01G 11/46 (2013.01); H01G 11/52 (2013.01); H01G 11/58 (2013.01); H01L 31/0224 (2006.01); H01L 31/18 (2006.01); H01M 14/00 (2006.01);
U.S. Cl.
CPC ...
H01L 31/032 (2013.01); C01G 3/02 (2013.01); H01B 1/08 (2013.01); H01G 9/2027 (2013.01); H01G 11/46 (2013.01); H01G 11/52 (2013.01); H01G 11/58 (2013.01); H01L 31/022425 (2013.01); H01L 31/06 (2013.01); H01L 31/18 (2013.01); H01M 14/005 (2013.01); C01P 2006/40 (2013.01); Y02E 10/542 (2013.01);
Abstract
A method of preparing a cupric oxide semiconductor. The method includes providing a substrate having a first surface, forming a cuprous oxide layer on the first surface, converting the cuprous oxide layer into a cupric oxide layer via an oxidation reaction, and depositing additional cupric oxide on the cupric oxide layer, which serves as a seed layer, to yield a cupric oxide film, thereby obtaining a cupric oxide semiconductor. Also disclosed are a cupric oxide semiconductor thus prepared and a photovoltaic device including it.