The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 2018
Filed:
Jun. 20, 2016
Hyundai Motor Company, Seoul, KR;
Dae Hwan Chun, Gyeonggi-do, KR;
Youngkyun Jung, Seoul, KR;
Nackyong Joo, Gyeonggi-do, KR;
Junghee Park, Gyeonggi-do, KR;
Jong Seok Lee, Gyeonggi-do, KR;
Hyundai Motor Company, Seoul, KR;
Abstract
A semiconductor device is provided. The device includes an n− type layer with a trench disposed in a first surface of an n+ type silicon carbide substrate. An n+ type region and a first p type region are disposed at the n− type layer and at a lateral surface of the trench. A plurality of second p type regions are disposed at the n− type layer and spaced apart from the first p type region. A gate electrode includes a first and a plurality of second gate electrodes disposed at the trench and extending from the first gate electrode, respectively. A source electrode is disposed on and insulated from the gate electrode. A drain electrode is disposed on a second surface of the n+ type silicon carbide substrate. The source electrode contacts the plurality of second p type regions spaced apart with the n− type layer disposed therein.