The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 2018
Filed:
May. 26, 2016
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/70 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/768 (2006.01); H01L 23/485 (2006.01); H01L 23/532 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66636 (2013.01); H01L 21/76805 (2013.01); H01L 21/76816 (2013.01); H01L 21/76843 (2013.01); H01L 21/76895 (2013.01); H01L 23/485 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01); H01L 23/5226 (2013.01); H01L 23/53223 (2013.01); H01L 23/53238 (2013.01); H01L 23/53266 (2013.01); H01L 23/53295 (2013.01);
Abstract
A semiconductor device includes a substrate with lower structures, an insulation layer covering the lower structures on the substrate, a contact hole through the insulation layer partially exposing the substrate, and a contact structure contacting the substrate through the contact hole, the contact structure including a barrier pattern having an upper barrier on an upper portion of a sidewall of the contact hole, and a lower barrier filling a lower portion of the contact hole, and a conductive contact pattern filling an upper portion of the contact hole defined by the upper barrier and the lower barrier.