The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 30, 2018

Filed:

Sep. 04, 2017
Applicant:

Toshiba Memory Corporation, Tokyo, JP;

Inventors:

Taku Kamoto, Oita Oita, JP;

Tatsuo Migita, Nagoya Aichi, JP;

Shinya Watanabe, Yokkaichi Mie, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 24/05 (2013.01); H01L 24/03 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 24/81 (2013.01); H01L 2224/0225 (2013.01); H01L 2224/0226 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/03452 (2013.01); H01L 2224/03614 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05124 (2013.01); H01L 2224/05139 (2013.01); H01L 2224/05144 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05155 (2013.01); H01L 2224/05572 (2013.01); H01L 2224/05573 (2013.01); H01L 2224/05666 (2013.01); H01L 2224/05681 (2013.01); H01L 2224/11462 (2013.01); H01L 2224/13026 (2013.01); H01L 2224/13124 (2013.01); H01L 2224/13139 (2013.01); H01L 2224/13144 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/13155 (2013.01); H01L 2224/13164 (2013.01); H01L 2224/13564 (2013.01); H01L 2224/13611 (2013.01); H01L 2224/13616 (2013.01); H01L 2224/13639 (2013.01); H01L 2224/13644 (2013.01); H01L 2224/13647 (2013.01); H01L 2224/13655 (2013.01); H01L 2224/13664 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/81203 (2013.01); H01L 2924/014 (2013.01); H01L 2924/04941 (2013.01); H01L 2924/04953 (2013.01); H01L 2924/05042 (2013.01); H01L 2924/05442 (2013.01); H01L 2924/07025 (2013.01); H01L 2924/3656 (2013.01);
Abstract

According to one embodiment, a semiconductor device includes a first semiconductor substrate having a first wiring electrode on a first surface thereof, a first protective layer on the semiconductor substrate, having an opening therethrough at the location of first wiring electrode, a first bump electrode in the opening of the first protective layer, the first bump electrode including a base overlying the wiring electrode and an opposed bump receiving surface, and a first bump comprising a bump diameter of 30 μm or less connected to the first bump electrode. The width of the base of the first bump electrode within the opening is equal to or less than 1.5 times the thickness of the first protective layer.


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