The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 30, 2018

Filed:

Mar. 22, 2018
Applicant:

Sandisk Technologies Llc, Plano, TX (US);

Inventor:

Junichi Ariyoshi, Yokkaichi, JP;

Assignee:

SANDISK TECHNOLOGIES LLC, Addison, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 27/11524 (2017.01); H01L 27/11556 (2017.01); H01L 27/11529 (2017.01); H01L 27/1157 (2017.01); H01L 21/768 (2006.01); H01L 27/11573 (2017.01); H01L 23/528 (2006.01); H01L 23/522 (2006.01); H01L 23/58 (2006.01); H01L 27/11582 (2017.01);
U.S. Cl.
CPC ...
H01L 23/564 (2013.01); H01L 21/76816 (2013.01); H01L 21/76877 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 23/585 (2013.01); H01L 27/1157 (2013.01); H01L 27/11524 (2013.01); H01L 27/11529 (2013.01); H01L 27/11556 (2013.01); H01L 27/11573 (2013.01); H01L 27/11582 (2013.01);
Abstract

A semiconductor die includes a pair of first alternating stacks of first portions of insulating layers and electrically conductive layers located over a semiconductor substrate, groups of memory stack structures vertically extending through a respective one of the pair of the first alternating stacks, a pair of second alternating stacks of second portions of the insulating layers and dielectric material layers laterally adjoined to a respective one of the first alternating stacks, such that each second portion of the insulating layers is connected to a respective one of the first portions of the insulating layers, and at least one seal ring structure laterally enclosing, and laterally spaced from, the pair of first alternating stacks, and contacting at least a first sidewall of each of the pair of second alternating stacks.


Find Patent Forward Citations

Loading…