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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10115674 B1

PDFFull Text
Date of Patent:
Oct. 30, 2018

Filed:

Aug. 10, 2016

Semiconductor device including electromagnetic interference (emi) shielding layer and method for manufacturing the semiconductor device

Applicant:

Toshiba Memory Corporation, Tokyo, JP;

Inventors:

Yuusuke Takano, Yokkaichi Mie, JP;

Takeshi Watanabe, Yokkaichi Mie, JP;

Assignee:

TOSHIBA MEMORY CORPORATION, Tokyo, JP;

Attorney:

Patterson & Sheridan, LLP

Primary Examiner:

Didarul Mazumder

Int. Cl.
CPC ...
H01L 21/28 (2006.01); H01L 21/32 (2006.01); H01L 21/02 (2006.01); H01L 23/48 (2006.01); H01L 21/56 (2006.01); H01L 23/31 (2006.01); H01L 23/552 (2006.01); H01L 21/3205 (2006.01); H01L 21/285 (2006.01); H01L 23/00 (2006.01); H01L 23/544 (2006.01);
U.S. Cl.
CPC ...
H01L 23/552 (2013.01); H01L 21/02244 (2013.01); H01L 21/02247 (2013.01); H01L 21/2855 (2013.01); H01L 21/32051 (2013.01); H01L 23/481 (2013.01); H01L 23/544 (2013.01); H01L 24/97 (2013.01); H01L 21/02252 (2013.01); H01L 21/561 (2013.01); H01L 23/3121 (2013.01); H01L 2223/54406 (2013.01); H01L 2223/54433 (2013.01); H01L 2223/54486 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/97 (2013.01); H01L 2924/15313 (2013.01);
Abstract

According to one embodiment, in a method for manufacturing a semiconductor device, a semiconductor chip is provided on a first surface of a substrate having the first surface, a second surface opposite to the first surface, and a side surface between the first surface and the second surface. A resin that seals the first surface of the semiconductor chip is formed on the semiconductor chip. A conductive film electrically connectable to a ground potential source is formed on an upper surface of the resin and a side surface of the resin. A metal oxide film or a metal nitride film is formed on the conductive film by depositing metal on the conductive film in an environment containing oxygen or nitrogen.

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