The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 2018
Filed:
Feb. 28, 2017
Seung Jae Jung, Suwon-si, KR;
Sang Joon Yoon, Yongin-si, KR;
Yong Hyun Kwon, Hwaseong-si, KR;
Dae Hyun Jang, Hwaseong-si, KR;
Ha NA Kim, Seoul, KR;
Seung Jae Jung, Suwon-si, KR;
Sang Joon Yoon, Yongin-si, KR;
Yong Hyun Kwon, Hwaseong-si, KR;
Dae Hyun Jang, Hwaseong-si, KR;
Ha Na Kim, Seoul, KR;
Abstract
A method of manufacturing a semiconductor device includes alternately stacking mold insulating layers and sacrificial layers on a substrate; forming channel holes penetrating through the mold insulating layers and the sacrificial layers and allowing recessed regions to be formed in the substrate; cleaning a surface of the recessed regions in such a manner that processes of forming a first protective layer in an upper region of the channel holes and performing an anisotropic dry etching process on the recessed regions in a lower portion of the channel holes are alternately repeated one or more times, in-situ; and forming epitaxial layers on the recessed regions of the substrate.