The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 2018
Filed:
Sep. 23, 2016
Sumitomo Heavy Industries, Ltd., Tokyo, JP;
Satoru Matsumoto, Tokyo, JP;
Teruhisa Kawasaki, Kanagawa, JP;
SUMITOMO HEAVY INDUSTRIES, LTD., Tokyo, JP;
Abstract
A dopant is ion-injected to a semiconductor layer formed of a group III-V compound semiconductor containing nitrogen as a Group V element. A first activation annealing is performed on the semiconductor layer having the ion-injected dopant using a heat-treating furnace under temperature conditions of 700° C. to 900° C. After the first activation annealing is performed, a second activation annealing is performed by allowing a pulsed laser beam to be incident on the semiconductor layer. A dopant activation rate can be improved using the above-described method.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile