The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 30, 2018

Filed:

Mar. 09, 2015
Applicant:

Blackberry Limited, Waterloo, CA;

Inventors:

Marina Zelner, Burlington, CA;

Susan Nagy, Burlington, CA;

Andrew Vladimir Claude Cervin, Burlington, CA;

Assignee:

BlackBerry Limited, Waterloo, CA;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01G 4/33 (2006.01); H01L 49/02 (2006.01); H01G 4/012 (2006.01); H01G 4/12 (2006.01);
U.S. Cl.
CPC ...
H01G 4/33 (2013.01); H01G 4/012 (2013.01); H01G 4/1227 (2013.01); H01L 28/56 (2013.01);
Abstract

A system that incorporates teachings of the subject disclosure may include, for example, a fabricated thin film capacitor formed by depositing a first dielectric layer on a first electrode layer utilizing a first process that is performed at a first temperature, depositing a second dielectric layer on the first dielectric layer utilizing a second process that forms a randomly-oriented grain structure for the second dielectric layer, depositing a third dielectric layer on the second dielectric layer utilizing a third process that is performed at a second temperature and that forms a columnar-oriented grain structure for the third dielectric layer where the second temperature is higher than the first temperature, and depositing a second electrode layer on the third dielectric layer to form the thin film capacitor. Other embodiments are disclosed.


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