The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 30, 2018

Filed:

May. 25, 2017
Applicant:

SK Hynix Inc., Icheon, KR;

Inventors:

Woo-Tae Lee, Seoul, KR;

Seok-Man Hong, Seoul, KR;

Tae-Hoon Kim, Seongnam, KR;

Sang-Hyun Ban, Icheon, KR;

Hye-Jung Choi, Icheon, KR;

Assignee:

SK HYNIX INC., Icheon, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01); G06F 3/06 (2006.01); G11C 13/04 (2006.01);
U.S. Cl.
CPC ...
G11C 13/004 (2013.01); G06F 3/0604 (2013.01); G06F 3/0659 (2013.01); G06F 3/0679 (2013.01); G11C 13/047 (2013.01); G11C 2013/0042 (2013.01);
Abstract

An electronic device includes a semiconductor memory, and the semiconductor memory includes a memory cell including a resistive memory element having a high resistance state and a low resistance state according to stored data, a selection element coupled serially to the resistive memory element, and a current clamping transistor electrically connected to a first end of the memory cell to limit an amount of a current flowing through the memory cell. In a drift recovery operation of the memory cell, a rising pulse voltage may be applied to a second end of the memory cell in a state in which the current clamping transistor has been turned off, the first end facing the second end.


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