The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 2018
Filed:
Jan. 13, 2017
Council of Scientific & Industrial Research, New Delhi, IN;
Ashok Kumar, New Delhi, IN;
Hitesh Borkar, New Delhi, IN;
Vaibhav Rao, New Delhi, IN;
Monika Tomar, New Delhi, IN;
Vinay Gupta, New Delhi, IN;
Abstract
The invention deals with multi-states nonvolatile opto-ferroelectric memory element and method of preparing the same thereof. This invention describes multi-states nonvolatile opto-ferroelectric memory element consisting of opto-ferroelectric memory material comprised of Pb(BiLi)(TiZr)O, wherein x=0.2 to 0.8 and y=0.2 to 0.6, said memory material (PBLZT) photovoltaic ferroelectric material is characterized by a single-phase opto-ferroelectric materials, photovoltaic and multi-states ferroelectric memory material. The invention relates to process of preparing multi-states nonvolatile opto-ferroelectric memory material by solid route, solution-gel process and pulsed laser process. It describes development of multi-states nonvolatile opto-ferroelectric memory material at room temperature. Invention describes a ferroelectric material whose polarization is switched by white light and low power LASER (10-50 mW) with wavelength (405 nm).