The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 30, 2018

Filed:

Mar. 02, 2016
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, Tokyo, JP;

Inventors:

Kentaro Kobayashi, Tokyo, JP;

Hiroshi Hamasaki, Hiratsuka Kanagawa, JP;

Naofumi Nakamura, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 27/453 (2006.01); G01N 15/10 (2006.01); G01N 27/447 (2006.01); G01N 33/487 (2006.01); B01L 3/00 (2006.01); G01N 15/12 (2006.01);
U.S. Cl.
CPC ...
G01N 15/1031 (2013.01); B01L 3/00 (2013.01); B01L 3/502761 (2013.01); G01N 15/12 (2013.01); G01N 27/44791 (2013.01); G01N 33/48721 (2013.01); B01L 2300/0645 (2013.01); B01L 2300/0681 (2013.01); B01L 2300/0816 (2013.01); B01L 2300/0864 (2013.01); B01L 2400/0415 (2013.01); G01N 2015/1006 (2013.01);
Abstract

According to one embodiment, a semiconductor analysis chip for detecting a particle in a sample liquid includes a semiconductor substrate, a first flow channel provided in a surface portion of the semiconductor substrate, a second flow channel provided in a surface portion of the semiconductor substrate, part of the second flow channel contacting or intersecting the first flow channel, a micropore provided in a contact portion or an intersection of the first and second flow channels, and configured to permit the particle to pass therethrough, a first electrode provided in the first flow channels, a second electrode provided in the second passage, and a third electrode provided in the first flow channel downstream of the first electrode.


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