The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 2018
Filed:
Nov. 05, 2015
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Chao Zheng, Shanghai, CN;
Wei Wang, Shanghai, CN;
Abstract
A method for forming a MEMS device is provided. The method includes providing a first wafer and a second wafer. The first wafer has a trench on a top surface of the first wafer and a fixed electrode on the bottom of the trench, and the second wafer has a polishing stop layer, a sacrificial layer, and a movable electrode. The method also includes bonding the first wafer and the second wafer with the top surface of the first wafer facing the top surface of the second wafer and the movable electrode on the second wafer located above the trench on the first wafer; removing the second wafer by polishing the second wafer from a backside of the second wafer until reaching the polishing stop layer; and releasing the movable electrode by removing a portion of the polishing stop layer and the sacrificial layer to form the MEMS device.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile