The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 23, 2018

Filed:

Jun. 08, 2017
Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventor:

Robert Alan Neidorff, Bedford, NH (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H03B 1/00 (2006.01); H03K 3/00 (2006.01); H03K 17/687 (2006.01); G05F 1/10 (2006.01); G01R 19/00 (2006.01);
U.S. Cl.
CPC ...
H03K 17/6871 (2013.01); G01R 19/0092 (2013.01); G05F 1/10 (2013.01);
Abstract

In some embodiments, a system comprises a power metal oxide semiconductor field effect transistor (MOSFET) configured to provide power in the system, a plurality of auxiliary MOSFETs, and a switch network configured to switchably and simultaneously couple a first of the plurality of auxiliary MOSFETs to the power MOSFET and a second of the plurality of auxiliary MOSFETs to a feedback voltage regulator. The switch network is further configured to switchably and simultaneously couple the first of the plurality of auxiliary MOSFETs to the feedback voltage regulator and the second of the plurality of auxiliary MOSFETs to the power MOSFET. The feedback voltage regulator is configured to cause a voltage at one or more of the plurality of auxiliary MOSFETs to match a voltage at the power MOSFET.


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