The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2018
Filed:
Oct. 02, 2015
Sony Corporation, Tokyo, JP;
Masaru Kuramoto, Kanagawa, JP;
Noriyuki Futagawa, Kanagawa, JP;
Tatsushi Hamaguchi, Kanagawa, JP;
Shoichiro Izumi, Kanagawa, JP;
SONY CORPORATION, Tokyo, JP;
Abstract
Provided is an optical semiconductor device including a laminate structural bodyin which an n-type compound semiconductor layer, an active layer, and a p-type compound semiconductor layerare laminated in this order. The active layerincludes a multiquantum well structure including a tunnel barrier layer, and a compositional variation of a well layeradjacent to the p-type compound semiconductor layeris greater than a compositional variation of another well layer. Band gap energy of the well layeradjacent to the p-type compound semiconductor layeris smaller than band gap energy of the other well layer. A thickness of the well layeradjacent to the p-type compound semiconductor layeris greater than a thickness of the other well layer.