The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 23, 2018

Filed:

Feb. 07, 2017
Applicant:

Furukawa Electric Co., Ltd., Tokyo, JP;

Inventor:

Hidehiro Taniguchi, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01); H01S 5/16 (2006.01); H01S 5/042 (2006.01); H01S 5/32 (2006.01); H01S 5/30 (2006.01); H01S 5/40 (2006.01); H01S 5/22 (2006.01);
U.S. Cl.
CPC ...
H01S 5/162 (2013.01); H01S 5/0425 (2013.01); H01S 5/22 (2013.01); H01S 5/305 (2013.01); H01S 5/3086 (2013.01); H01S 5/3209 (2013.01); H01S 5/4031 (2013.01);
Abstract

A semiconductor device includes: a semiconductor layered structure including an active layer, a first region including a part of the active layer and extending in a layered direction, a second region including at least a part of an end portion of the active layer and extending in the layered direction, disordering of the second region being higher than the first region, and a third region including a portion of the active layer between the first region and the second region and extending in the layered direction, disordering of the third region being higher than the first region and lower than the second region; and an electrode configured to inject an electric current to the active layer.


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