The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2018
Filed:
Aug. 20, 2015
Applicant:
Sony Corporation, Tokyo, JP;
Inventors:
Rintaro Koda, Tokyo, JP;
Masaru Kuramoto, Kanagawa, JP;
Shunsuke Kono, Kanagawa, JP;
Hideki Watanabe, Kanagawa, JP;
Hiroshi Yoshida, Kanagawa, JP;
Assignee:
SONY CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01); H01S 5/10 (2006.01); H01S 5/026 (2006.01); H01S 5/042 (2006.01); H01S 5/22 (2006.01); H01S 5/343 (2006.01); H01S 5/50 (2006.01); H01S 5/062 (2006.01); H01S 5/323 (2006.01); H01S 5/20 (2006.01); H01S 5/0625 (2006.01);
U.S. Cl.
CPC ...
H01S 5/1014 (2013.01); H01S 5/026 (2013.01); H01S 5/0425 (2013.01); H01S 5/06216 (2013.01); H01S 5/2045 (2013.01); H01S 5/22 (2013.01); H01S 5/32341 (2013.01); H01S 5/34333 (2013.01); H01S 5/5081 (2013.01); H01S 5/06253 (2013.01);
Abstract
Provided is an optical semiconductor element including: a stacked structure bodyformed of a first compound semiconductor layer, a third compound semiconductor layer (active layer), and a second compound semiconductor layer. A fundamental mode waveguide regionwith a waveguide width W, a free propagation regionwith a width larger than W, and a light emitting regionhaving a tapered shape (flared shape) with a width increasing toward a light emitting end surfaceare arranged in sequence.