The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 23, 2018

Filed:

Feb. 23, 2017
Applicant:

Nichia Corporation, Anan-shi, Tokushima, JP;

Inventors:

Yuya Yamakami, Komatsushima, JP;

Daisuke Morita, Tokushima, JP;

Assignee:

NICHIA CORPORATION, Anan-Shi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/38 (2010.01); H01L 33/32 (2010.01); H01L 33/40 (2010.01); H01L 33/62 (2010.01); H01L 33/44 (2010.01);
U.S. Cl.
CPC ...
H01L 33/38 (2013.01); H01L 33/44 (2013.01); H01L 33/405 (2013.01);
Abstract

A light-emitting device includes a semiconductor layered structure; a conductive substrate disposed below the semiconductor layered structure; one or more upper electrodes, each disposed on a portion of an upper surface of the semiconductor layered structure; a lower electrode disposed on a lower surface of the semiconductor layered structure in a region spaced apart from regions of the lower surface of the semiconductor layered structure directly under the upper electrodes, the lower electrode being electrically connected between the semiconductor layered structure and the substrate; and one or more conduction prevention portions, each disposed on the lower surface of the semiconductor layered structure in at least a region located between (i) a region directly under a respective one of the one or more upper electrodes and (ii) the region on which the lower electrode is disposed.


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