The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 23, 2018

Filed:

Jul. 07, 2017
Applicant:

Playnitride Inc., Tainan, TW;

Inventors:

Jyun-De Wu, Tainan, TW;

Yu-Yun Lo, Tainan, TW;

Assignee:

PlayNitride Inc., Tainan, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/20 (2010.01); H01L 33/06 (2010.01); H01L 33/30 (2010.01); H01L 33/40 (2010.01); H01L 33/42 (2010.01);
U.S. Cl.
CPC ...
H01L 33/20 (2013.01); H01L 33/06 (2013.01); H01L 33/30 (2013.01); H01L 33/405 (2013.01); H01L 33/42 (2013.01);
Abstract

A light-emitting diode chip including a p-type semiconductor layer, a light-emitting layer and an n-type semiconductor layer is provided. The light-emitting layer is disposed between the p-type semiconductor layer and the n-type semiconductor layer. A ratio of a sum of thicknesses of all semiconductor layers of the light-emitting diode chip over a maximum width of the light-emitting diode chip ranges from 0.02 to 1.5. A ratio of a sum of thicknesses of all semiconductor layers located in a side of the light-emitting layer toward the p-type semiconductor layer over the sum of thicknesses of all semiconductor layers of the light-emitting diode chip ranges from 0.05 to 0.2.


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