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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10109760 B1

PDFFull Text
Date of Patent:
Oct. 23, 2018

Filed:

Apr. 08, 2016

Eliminating emissive sub-bandgap states in nanocrystals

Applicant:

Massachusetts Institute of Technology, Cambridge, MA (US);

Inventors:

Gyuweon Hwang, Cambridge, MA (US);

Donghun Kim, Cambridge, MA (US);

Jose M. Cordero, Cambridge, MA (US);

Mark W. B. Wilson, Somerville, MA (US);

Chia-Hao M. Chuang, Cambridge, MA (US);

Jeffrey C. Grossman, Brookline, MA (US);

Moungi G. Bawendi, Cambridge, MA (US);

Assignee:

MASSACHUSETTS INSTITUTE OF TECHNOLOGY, Cambridge, MA (US);

Attorney:

Steptoe & Johnson LLP

Primary Examiner:

Pancham Bakshi

Int. Cl.
CPC ...
H01L 31/18 (2006.01); H01L 31/036 (2006.01); H01L 31/032 (2006.01); H01L 31/0445 (2014.01); H01L 51/00 (2006.01); H01L 31/0352 (2006.01); H01L 51/42 (2006.01);
U.S. Cl.
CPC ...
H01L 31/18 (2013.01); H01L 31/036 (2013.01); H01L 31/0324 (2013.01); H01L 31/035218 (2013.01); H01L 31/0445 (2014.12); H01L 51/0001 (2013.01); H01L 51/0077 (2013.01); H01L 51/42 (2013.01);
Abstract

The size-dependent band-gap tunability and solution processability of nanocrystals (NCs) make them attractive candidates for optoelectronic applications. One factor that presently limits the device performance of NC thin films is sub-bandgap states, also referred to as trap states. Trap states can be controlled by surface treatment of the nanocrystals.

Find Patent Forward Citations

Hwang, Gyuweon. (2018). Eliminating emissive sub-bandgap states in nanocrystals (U.S. Patent No. 10109760). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10109760

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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