The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2018
Filed:
Oct. 26, 2016
Magnachip Semiconductor, Ltd., Cheongju-si, KR;
Itm Semiconductor Co., Ltd., Cheongju-si, KR;
Soo Chang Kang, Seoul, KR;
Seung Hyun Kim, Seoul, KR;
Yong Won Lee, Bucheon-si, KR;
Ho Seok Hwang, Gunpo-si, KR;
Sang Hoon Ahn, Cheongju-si, KR;
Magnachip Semiconductor, Ltd., Cheongju-si, KR;
ITM Semiconductor Co., Ltd., Cheongju-si, KR;
Abstract
A power MOSFET includes an insulating layer, a first conductivity type doping layer situated on a bottom of the insulating layer, a second conductivity type body situated on a bottom of the first conductivity type doping layer, a gate electrode adjacent to the bottom of the insulating layer and covered with an insulating film in other regions and projected to penetrate the second conductivity type body, and a source electrode including a first region situated on a top of the insulating layer and a second region in contact with the first conductivity type doping layer by penetrating the insulating layer.