The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2018
Filed:
Jan. 03, 2017
Applicant:
Fairchild Korea Semiconductor, Ltd., Bucheon-si, KR;
Inventors:
Kyu-hyun Lee, Bucheon-si, KR;
Se-kyeong Lee, Bucheon-si, KR;
Doo-seok Yoon, Seoul, KR;
Soo-hyun Kang, Incheon, KR;
Young-chul Choi, Seoul, KR;
Assignee:
Semiconductor Components Industries, LLC, Phoenix, AZ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/331 (2006.01); H01L 21/8222 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/36 (2006.01); H01L 29/739 (2006.01); H01L 29/10 (2006.01); H01L 21/02 (2006.01); H01L 21/304 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66348 (2013.01); H01L 21/02694 (2013.01); H01L 21/304 (2013.01); H01L 29/0615 (2013.01); H01L 29/0834 (2013.01); H01L 29/1095 (2013.01); H01L 29/36 (2013.01); H01L 29/66333 (2013.01); H01L 29/7397 (2013.01);
Abstract
In one general aspect, a method of fabricating a power device can include preparing a semiconductor substrate of a first conductivity type, and forming a first Field Stop (FS) layer and a second FS layer.