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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10109710 B1

PDFFull Text
Date of Patent:
Oct. 23, 2018

Filed:

Nov. 02, 2015

Semiconductor device having germanium layer as channel region and method for manufacturing the same

Applicant:

Japan Science and Technology Agency, Kawaguchi-shi, Saitama, JP;

Inventors:

Akira Toriumi, Tokyo, JP;

Choong-hyun Lee, Tokyo, JP;

Tomonori Nishimura, Tokyo, JP;

Assignee:

Japan Science and Technology Agency, Kawaguchi-shi, Saitama, JP;

Attorney:

Amster, Rothstein & Ebenstein LLP

Primary Examiner:

Telly Green

Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/08 (2006.01); H01L 29/167 (2006.01); H01L 29/10 (2006.01); H01L 21/223 (2006.01); H01L 29/04 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0847 (2013.01); H01L 21/223 (2013.01); H01L 29/105 (2013.01); H01L 29/167 (2013.01); H01L 29/66477 (2013.01); H01L 29/045 (2013.01); H01L 29/78 (2013.01);
Abstract

A semiconductor device having a channel region that is formed in a germanium layer and has a first conductive type, and a source region and a drain region that are formed in the germanium layer and have a second conductive type different from the first conductive type, wherein an oxygen concentration in the channel region is less than an oxygen concentration in a junction interface between at least one of the source region and the drain region and a region that surrounds the at least one of the source region and the drain region and has the first conductive type.

Find Patent Forward Citations

Toriumi, Akira. (2018). Semiconductor device having germanium layer as channel region and method for manufacturing the same (U.S. Patent No. 10109710). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10109710

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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