The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2018
Filed:
Nov. 18, 2015
Applicant:
Magnachip Semiconductor, Ltd., Cheongju-si, KR;
Inventors:
Kwang Il Kim, Cheongju-si, KR;
Young Bae Kim, Cheongju-si, KR;
Assignee:
Magnachip Semiconductor, Ltd., Cheongju-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 49/02 (2006.01); H01L 27/02 (2006.01); H01L 27/06 (2006.01); H01L 29/78 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 28/20 (2013.01); H01L 27/0207 (2013.01); H01L 27/0629 (2013.01); H01L 29/1095 (2013.01); H01L 29/7801 (2013.01);
Abstract
An example provides a semiconductor device including an insulator with a predetermined thickness between a well region of a semiconductor substrate and a resistor of polysilicon. The insulator has a structure that is able to withstand an ultrahigh voltage, and thereby allows the manufacture of a semiconductor device resistor that can bear an ultrahigh voltage without increasing the size of a semiconductor substrate and a semiconductor device including such a resistor. Other examples provide a method for manufacturing such a semiconductor device.