The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 23, 2018

Filed:

May. 27, 2016
Applicant:

Lg Display Co., Ltd., Seoul, KR;

Inventors:

Jin-Hee Jang, Seoul, KR;

Se June Kim, Paju-si, KR;

Joon Suk Lee, Seoul, KR;

So Jung Lee, Paju-si, KR;

Jong Hyeok Im, Busan, JP;

Jae Sung Lee, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/32 (2006.01); H01L 51/52 (2006.01);
U.S. Cl.
CPC ...
H01L 27/3276 (2013.01); H01L 51/5218 (2013.01); H01L 51/5228 (2013.01); H01L 27/3246 (2013.01); H01L 2224/0518 (2013.01); H01L 2224/05073 (2013.01); H01L 2224/05166 (2013.01); H01L 2224/05647 (2013.01); H01L 2227/323 (2013.01); H01L 2251/301 (2013.01); H01L 2924/0132 (2013.01);
Abstract

Discussed are an organic light emitting display device and a method of manufacturing the same. The organic light emitting display device according to an embodiment includes a substrate including an active area and a pad area, a thin film transistor (TFT) in the active area of the substrate, an anode electrode on the TFT, an organic emission layer on the anode electrode, a cathode electrode on the organic emission layer, an auxiliary electrode connected to the cathode electrode and disposed on the same layer as the anode electrode, a signal pad in the pad area of the substrate, and a pad electrode connected to the signal pad to cover a top of the signal pad for preventing the top of the signal pad from being corroded. The TFT includes a gate electrode. The signal pad is disposed on the same layer as the gate electrode.


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