The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 23, 2018

Filed:

Jun. 24, 2015
Applicant:

Joled Inc., Tokyo, JP;

Inventors:

Kenichi Nendai, Tokyo, JP;

Nobuto Hosono, Tokyo, JP;

Assignee:

JOLED INC., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/40 (2006.01); H01L 27/32 (2006.01); H01L 51/00 (2006.01); H01L 51/56 (2006.01);
U.S. Cl.
CPC ...
H01L 27/3246 (2013.01); H01L 27/322 (2013.01); H01L 51/0004 (2013.01); H01L 51/56 (2013.01); H01L 2227/323 (2013.01);
Abstract

An organic EL display panel manufacturing method including: preparing a substrate; forming at least first electrodes on the substrate; forming, by performing photolithography on the substrate having the first electrodes, a bank layer made of a photoresist and having apertures corresponding one-to-one with the first electrodes; forming a functional layer in each of the apertures by applying an ink containing a functional material to the aperture and drying the applied ink; and forming at least a second electrode on the functional layer. The forming of the bank layer includes: applying the photoresist to the substrate having the first electrodes; forming apertures corresponding one-to-one with the first electrodes in the photoresist by performing exposure using a mask and then developing the photoresist; after forming the apertures, performing exposure of the photoresist having the apertures; after performing the exposure of the photoresist having the apertures, baking the photoresist.


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