The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2018
Filed:
May. 23, 2017
Joseph P Donnelly, Carlisle, MA (US);
K Alexander Mcintosh, Groton, MA (US);
Erik K Duerr, Groton, MA (US);
William D Goodhue, Spencer, MA (US);
Robert J Bailey, Methuen, MA (US);
Lisa a Wright, Chelmsford, MA (US);
Joseph P Donnelly, Carlisle, MA (US);
K Alexander McIntosh, Groton, MA (US);
Erik K Duerr, Groton, MA (US);
William D Goodhue, Spencer, MA (US);
Robert J Bailey, Methuen, MA (US);
Lisa A Wright, Chelmsford, MA (US);
Massachusetts Institute of Technology, Cambridge, MA (US);
Abstract
There is provided an avalanche photodiode array that includes a plurality of avalanche photodiodes. Each avalanche photodiode in the array includes a stack of active photodiode materials. The stack of active photodiode materials includes a first electrical contact layer, a second electrical contact layer; an absorber material layer and an avalanche material layer each disposed between the first electrical contact layer and the second electrical contact layer; and an optical interface surface to the avalanche photodiode. The optical interface surface consists of an exposed surface of the first electrical contact layer, arranged for incident external radiation to directly enter the first electrical contact layer. Each avalanche photodiode stack of active photodiode materials is laterally isolated from the other avalanche photodiodes in the photodiode array.