The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 23, 2018

Filed:

Mar. 22, 2017
Applicant:

Joled Inc., Tokyo, JP;

Inventors:

Yasunobu Hiromasu, Tokyo, JP;

Motohiro Toyota, Tokyo, JP;

Shinichi Ushikura, Tokyo, JP;

Assignee:

JOLED INC., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 27/02 (2006.01); H01L 27/32 (2006.01); H01L 29/786 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1225 (2013.01); H01L 27/0266 (2013.01); H01L 27/124 (2013.01); H01L 27/1248 (2013.01); H01L 27/1255 (2013.01); H01L 27/1288 (2013.01); H01L 27/3262 (2013.01); H01L 27/3265 (2013.01); H01L 29/7869 (2013.01); H01L 2029/42388 (2013.01);
Abstract

According to one embodiment, a semiconductor device includes an insulating substrate including a pixel area and a peripheral circuit area around the pixel area, a first insulating layer which is provided on the insulating substrate and includes at least nitrogen, a second insulating layer at least provided on the first insulating layer of the peripheral circuit area, a first thin-film transistor which is provided above the first insulating layer of the pixel area and includes a first oxide semiconductor layer, and a second thin-film transistor which is provided on the second insulating layer of the peripheral circuit area and includes a second oxide semiconductor layer. The second insulating layer in the pixel area is thinner than that in the peripheral circuit area.


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