The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2018
Filed:
Jun. 03, 2016
Gang Yu, Santa Barbara, CA (US);
Chan-long Shieh, Paradise Valley, AZ (US);
Juergen Musolf, Santa Barbara, CA (US);
Fatt Foong, Goleta, CA (US);
Tian Xiao, Santa Barbara, CA (US);
Gang Yu, Santa Barbara, CA (US);
Chan-Long Shieh, Paradise Valley, AZ (US);
Juergen Musolf, Santa Barbara, CA (US);
Fatt Foong, Goleta, CA (US);
Tian Xiao, Santa Barbara, CA (US);
CBRITE INC., Goleta, CA (US);
Abstract
A method of fabricating a high mobility semiconductor metal oxide thin film transistor including the steps of depositing a layer of semiconductor metal oxide material, depositing a blanket layer of etch-stop material on the layer of MO material, and patterning a layer of source/drain metal on the blanket layer of etch-stop material including etching the layer of source/drain metal into source/drain terminals positioned to define a channel area in the semiconductor metal oxide layer. The etch-stop material being electrically conductive in a direction perpendicular to the plane of the blanket layer at least under the source/drain terminals to provide electrical contact between each of the source/drain terminals and the layer of semiconductor metal oxide material. The etch-stop material is also chemical robust to protect the layer of semiconductor metal oxide channel material during the etching process.