The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2018
Filed:
Sep. 26, 2016
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11582 (2017.01); H01L 27/11578 (2017.01); H01L 29/66 (2006.01); H01L 29/792 (2006.01); H01L 27/105 (2006.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01); H01L 21/285 (2006.01); H01L 21/306 (2006.01); H01L 21/3213 (2006.01); H01L 27/11568 (2017.01); H01L 29/423 (2006.01); H01L 29/45 (2006.01); H01L 27/1158 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 21/02524 (2013.01); H01L 21/02587 (2013.01); H01L 21/02598 (2013.01); H01L 21/02675 (2013.01); H01L 21/28282 (2013.01); H01L 21/28518 (2013.01); H01L 21/30604 (2013.01); H01L 21/32133 (2013.01); H01L 27/1052 (2013.01); H01L 27/11568 (2013.01); H01L 27/11578 (2013.01); H01L 29/4234 (2013.01); H01L 29/45 (2013.01); H01L 29/665 (2013.01); H01L 29/66666 (2013.01); H01L 29/66787 (2013.01); H01L 29/66833 (2013.01); H01L 29/792 (2013.01); H01L 29/7926 (2013.01); H01L 27/1158 (2013.01);
Abstract
In a vertical-type memory device and a method of manufacturing the vertical-type memory device, the vertical memory device includes an insulation layer pattern of a linear shape provided on a substrate, pillar-shaped single-crystalline semiconductor patterns provided on both sidewalls of the insulation layer pattern and transistors provided on a sidewall of each of the single-crystalline semiconductor patterns. The transistors are arranged in a vertical direction of the single-crystalline semiconductor pattern, and thus the memory device may be highly integrated.