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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10109629 B1

PDFFull Text
Date of Patent:
Oct. 23, 2018

Filed:

Nov. 18, 2016

Semiconductor devices including gate structures with oxygen capturing films

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Ju-youn Kim, Suwon-si, KR;

Hyun-jo Kim, Seoul, KR;

Assignee:

Samsung Electronics Co., Ltd., , KR;

Attorney:

Ward and Smith, P.A.

Primary Examiner:

Cuong Q Nguyen

Assistant Examiner:

Tong-Ho Kim

Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 27/092 (2006.01); H01L 29/51 (2006.01); H01L 21/8238 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 27/092 (2013.01); H01L 21/823842 (2013.01); H01L 29/0649 (2013.01); H01L 29/4236 (2013.01); H01L 29/512 (2013.01); H01L 29/7827 (2013.01); H01L 21/82345 (2013.01);
Abstract

A semiconductor device includes: a semiconductor substrate including an active region and a gate structure on the active region. The gate structure includes a gate insulating film; a work function adjusting film on the first gate insulating film; a separation film on the work function adjusting film; and an oxygen capturing film on the separation film and configured to capture oxygen introduced from the outside of the first gate structure. The oxygen capturing film is spaced apart from a top surface of the first gate insulating film by about 70 Å to about 80 Å.

Find Patent Forward Citations

Kim, Ju-youn. (2018). Semiconductor devices including gate structures with oxygen capturing films (U.S. Patent No. 10109629). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10109629

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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