The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2018
Filed:
Mar. 10, 2017
Renesas Electronics Corporation, Tokyo, JP;
Masaaki Shinohara, Tokyo, JP;
Renesas Electronics Corporation, Koutou-ku, Tokyo, JP;
Abstract
To provide a semiconductor device having an element isolation structure formed in the main surface of a semiconductor substrate, having a space in a trench, and prevented from having deteriorated performance due to an increase in the height of the top portion of the space. A trench portion is formed in the main surface of a semiconductor substrate by using a hard-mask insulating film. A first insulating film that covers the upper surface of the hard-mask insulating film and the surface of the trench portion is formed, followed by etch-back of the first insulating film to expose the upper surface of the hard-mask insulating film. Then, second and third insulating films that cover the upper surface of the hard-mask insulating film and the surface of the trench portion are formed to form a space in the trench portion.