The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2018
Filed:
Feb. 26, 2017
Kabushiki Kaisha Toshiba, Tokyo, JP;
Takayuki Teraguchi, Kawasaki Kanagawa, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor device includes a field effect transistor formed on a semiconductor layer. The field effect transistor can be used for passing or blocking a radio frequency signal. A signal interconnection wiring is above the field effect transistor in a first direction. A plurality of conductors, which are in electrically insulated from each other and other elements in the device, is between the field effect transistor and the signal interconnection wiring in the first direction. A length, in a second direction, of each floating conductor is less than a width, in the second direction, of a gate of the field effect transistor. Here, the second direction is parallel to the plane of the semiconductor layer and perpendicular to a gate length direction of the field effect transistor.