The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2018
Filed:
Apr. 04, 2017
Applicant:
Texas Instruments Incorporated, Dallas, TX (US);
Inventors:
Jeffrey A. West, Dallas, TX (US);
Byron Lovell Williams, Plano, TX (US);
David Leonard Larkin, Richardson, TX (US);
Weidong Tian, Dallas, TX (US);
Assignee:
TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 21/02 (2006.01); H01L 49/02 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5222 (2013.01); H01L 21/0217 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H01L 23/53295 (2013.01); H01L 28/40 (2013.01);
Abstract
A method and structure for improving high voltage breakdown reliability of a microelectronic device, e.g., a galvanic digital isolator, involves providing an abatement structure around metal plate corners of a high voltage isolation capacitor to ameliorate the effects of an electric field formed thereat during operation of the device due to dielectric discontinuity.