The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 23, 2018

Filed:

Dec. 24, 2014
Applicant:

Hitachi, Ltd., Chiyoda-ku, Tokyo, JP;

Inventors:

Takashi Hirao, Tokyo, JP;

Kan Yasui, Tokyo, JP;

Kazuhiro Suzuki, Tokyo, JP;

Assignee:

Hitachi, Ltd., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/04 (2006.01); H01L 23/31 (2006.01); H01L 23/29 (2006.01); H01L 29/06 (2006.01); H01L 29/16 (2006.01); H01L 29/872 (2006.01); H01L 23/053 (2006.01); H01L 23/373 (2006.01); H01L 23/00 (2006.01); H01L 25/18 (2006.01); H02M 7/537 (2006.01); H02M 7/00 (2006.01); H02P 27/06 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3192 (2013.01); H01L 23/053 (2013.01); H01L 23/291 (2013.01); H01L 23/293 (2013.01); H01L 23/296 (2013.01); H01L 23/3114 (2013.01); H01L 23/3171 (2013.01); H01L 23/3735 (2013.01); H01L 24/32 (2013.01); H01L 24/48 (2013.01); H01L 24/73 (2013.01); H01L 25/18 (2013.01); H01L 29/0638 (2013.01); H01L 29/1608 (2013.01); H01L 29/872 (2013.01); H02M 7/003 (2013.01); H02M 7/537 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/48225 (2013.01); H01L 2224/73265 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/10272 (2013.01); H01L 2924/12032 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/14252 (2013.01); H02P 27/06 (2013.01);
Abstract

In order to improve productivity of a semiconductor device, while improving stability of the blocking voltage of the semiconductor device, this semiconductor device is characterized by having a semiconductor element, and a laminated structure having three resin layers, said laminated structure being in a peripheral section surrounding a main electrode on one surface of the semiconductor element. The semiconductor device is also characterized in that the laminated structure has, on the center section side of the semiconductor element, a region where a lower resin layer is in contact with an intermediate resin layer, and a region where the lower resin layer is in contact with an upper resin layer.


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