The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 23, 2018

Filed:

Jun. 21, 2017
Applicant:

Lam Research Corporation, Fremont, CA (US);

Inventors:

David Cheung, Foster City, CA (US);

Ilia Kalinovski, Berkeley, CA (US);

Assignee:

LAM RESEARCH CORPORATION, Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/3105 (2006.01); H01L 21/311 (2006.01); C07F 7/10 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02167 (2013.01); H01L 21/02362 (2013.01); H01L 21/3105 (2013.01); H01L 21/31144 (2013.01); C07F 7/10 (2013.01); H01L 21/02211 (2013.01); H01L 21/02219 (2013.01); H01L 21/02271 (2013.01);
Abstract

A method for depositing a barrier layer includes a) arranging a substrate including a nitride layer in a processing chamber; b) setting a process temperature in the processing chamber to a predetermined process temperature range; c) setting a process pressure in the processing chamber to a predetermined process pressure range; d) supplying at least one of a gas and a vapor including an organosilane precursor species; and e) depositing a barrier layer on the nitride layer. The barrier layer reduces diffusion of nitrogen-containing groups in the nitride layer into a photoresist layer that is subsequently deposited on the nitride layer.


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