The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2018
Filed:
Oct. 28, 2015
Avago Technologies General Ip (Singapore) Pte. Ltd., Singapore, SG;
Jonathan A. Schmitt, Eden Prairie, MN (US);
Jermyn Tseng, Irvine, CA (US);
Avago Technologies General IP (Singapore) Pte. Ltd., Singapore, SG;
Abstract
A non-volatile memory cell, having an antifuse for storing data, is disclosed for use in a non-volatile data storage device. The non-volatile memory cell includes multiple redundant signal pathways to provide redundant access to the antifuse. During operation, the non-volatile memory cell can access the antifuse using a first signal pathway from among the multiple redundant signal pathways. However, when the first signal pathway is inoperable, the non-volatile memory cell is able to access the antifuse using a second signal pathway from among the multiple redundant signal pathways. The non-volatile memory cell is fabricated using a continuous region of one or more diffusion layers to allow efficient connection to other non-volatile memory cells to form an array of memory cells for the non-volatile data storage device.